All III‐arsenide low threshold InAs quantum dot lasers on InP(001)
نویسندگان
چکیده
Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. approach avoids issues associated with use phosphorus compounds, which are evident in crystal growth conventional C/L‐band QD lasers, making manufacturing process safer, simpler, and more cost‐effective. The threshold current density fabricated laser was 633 A/cm 2 , is lowest value for 1.6‐µm wavelength region. result suggests high cost‐effectiveness paves way towards large‐scale production technology high‐performing C/L/U‐band lasers.
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2023
ISSN: ['0013-5194', '1350-911X']
DOI: https://doi.org/10.1049/ell2.12920